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| NTE386 Silicon NPN Transistor Audio Power Amp, Switch Description: The NTE386 is a silicon NPN power transistor in a TO3 type package designed for high voltage, high- speed power switching in inductive circuit where fall time is critical. This device is particularly suited for line operated switchmode applications. Applications: D Switching Regulators D Inverters D Solenoid and Relay Drivers D Motor Controls D Deflection Circuits Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Collector-Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Total Power Dissipation (TC = +100C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0C/W Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . +275C Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle 10%. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Sustaining Voltage Collector Cutoff Current VCEO(sus) IC = 100mA, IB = 0 ICEV ICER Emitter Cutoff Current ON Characteristics (Note 2) DC Current Gain Collector-Emitter Saturation Voltage hFE VCE(sat) VBE(sat) Ccb td tr ts tf VCE = 5V, IC = 5A IC = 10A, IB = 2A IC = 20A, IB = 6.7A Base-Emitter Saturation Voltage Dynamic Characteristics Output Capacitance VCB = 10V, IE = 0, ftest = 1kHz VCC = 250V, IC = 10A, IB1 = 2A, VBE(off) = 5V, tp = 10s, Duty Cycle 2% 125 - 500 pF s s s s IC = 10A, IB = 2A 10 - - - - - - - 60 1.8 5.0 1.8 V V V IEBO VCEV = 800V, VEB(off) = 1.5V VCE = 800V, RBE = 50, TC = +100C VBE = 6V, IC = 0 500 - - - - - - - - 0.25 5.0 1.0 V mA mA mA Symbol Test Conditions Min Typ Max Unit Switching Characteristics (Resistive Load) Dealy Time Rise Time Storage Time Fall Time - - - - 0.02 0.3 1.6 0.3 0.1 0.7 4.0 0.7 Note 2. Pulse Test: Pulse Width = 300ms, Duty Cycle 2%. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .215 (5.45) .040 (1.02) 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case |
Price & Availability of NTE386
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